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Trench MOSFET
VD MOSFET
SiC Diode
IGBT
Super junction  MOSFET
Trench MOSFET

Part Number

Package

V(BR)DSS(V)

ID(A)@25℃

PD(W)@25℃

VGS(th)(V)

@250μA

RDS(on)(mΩ)

@VGS=10V/4.5V, 25℃

Ciss(pf)

Qg(nC)

Status

10V4.5V


Typ


Typ

MinMaxTypMaxTypMax

MP8205A

SOT23-62060.830.451 **2125**Production
MPTP80R08TO-220807520024

8.5

109.512260449.9Production
VD MOSFET


Part Number

Package

 V(BR)DSS(V)

 ID(A)@25℃

 PD(W)  @25℃

VGS(th)(V)

@250μA

RDS(on)(Ω)

@VGS=10V,25℃

Ciss(pf)

Qg(nC)

Status

MinMaxTypMax
MPVA5N50TO-220F500530241.21.549016Production
MPVA13N50TO-220F5001345240.460.6158041Production
MPVA2N60TO-220F600223243.94.52508.4Production
MPVP2N60TO-220
600254243.94.52508.4Production
MPVT2N60TO-126600246243.94.53808.4Production
MPVD2N60TO-252600246243.94.53808.4Production
MPVU2N60TO-251600246243.94.53808.4Production
MPVA4N60TO-220F600480242.12.571012Production
MPVD4N60TO-252600480242.12.571012Production
MPVU4N60TO-251600480242.12.571012Production
MPVA7N60TO-220F600720241.21.496823Production
‍ MPVA8N50 TO-220F500       8    39   35  0.76  0.851206   32
‍ MPVA10N60TO-220F600       10    40240.6  0.75  200035 Production
MPVP8N60TO-220600814724——1.2100632Production
MPVP10N60  TO-22060010    40240.60.75 200035Production
MPVP12N60TO-22060012210240.650.65221341Production
MPVA2N65TO-220F650223244.64.62508.4
Production
MPVP2N65TO-220650254244.64.62508.4Production
MPVD2N65TO-252650246244.64.63808.4Production
MPVU2N65TO-251650246244.64.63808.4Production
MPVD4N65TO-252650480242.52.571016Production
MPVU4N65TO-251650480242.52.571016Production
MPVA4N65TO-251650480242.12.571016Production
MPVA7N65TO-220F650746241.351.35110020Production
MPVD7N65TO-252650758241.351.3576020Production
MPVU7N65TO-251650758351.351.3576020Production
MPVA8N65TO-220F650840241.31.3200632Production
MPVA10N65TO-220F6501050240.90.9160045Production
MPVP10N65TO-220F6501050240.90.9160045Production
MPVA12N65TO-220F6501251240.650.65210042Production
MPVP12N65TO-22065012215240.850.85221342Production
MPVD4N70TO-252700432352.5370315.5Production
MPVU6N70

TO-251

700648351.62.270317.5Production
SiC Diode


Part Number

Package

VRRM (V)

If(A)@

150℃

Ptot(W)@25℃

Vf(V)

Qc(nC)

Status

25℃175℃


Typ

TypMaxTypMax
MPCC06N65TO-220-265061111.51.82.2
22Production
MPCC08N65TO-220-265081191.51.82.2
26Production
MPCC10N65TO-220-2650101391.51.82
33Production
MPCC10N120TO-220-21200102051.51.82.2
50Production
IGBT


Part Number

Package

V(BR)CES (V)

IC(A)@100℃

VGE(th)(V)

VCE(sat) (V)@VGE=15V 25℃

With FRD（Y/N）

Status

TypTypMax
MPBC10N60BTO-263600105.41.82.2YEngineering
MPBP10N60BTO-220600105.41.82.2YEngineering
MPBA15N60BTO-220F600155.71.72.4YEngineering
MPBC15N60BTO-263600155.71.72.4YEngineering
MPBT40N60BTO-3P600405.71.82.3YProduction
MPBW40N60BTO-247600405.71.82.3YProduction
MPBW40N65BUTO-247650405.71.92.4YEngineering
MPBW40N60BFTO-247600405.71.82.3YProduction
MPBW40N120BTO-2471200405.81.92.4YEngineering
Super junction  MOSFET
Part NumberPackage

V(BR)

DSS(V)

ID(A)

@25℃

PD(W)

@25℃

VGS(th)(V)

RDS(on)(mΩ)

@VGS=10V/4.5V, 25℃

Ciss(pf)Qg(nC)Status
10V4.5VTypTyp
MinMaxTypMaxTypMax
MPSW60M082TO-24760047391347482

368072Engineering
MPSW60M041TO-24760072481343741

7360140Engineering

Marching Power

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